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67 Results for the search "EV":

See Change load power from an external file

Author: h.gras
Type: Example
Downloaded: 333 times
Date: 2018-01-02

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Change load power from an external file

Description:
This example illustrates how to read data from an external file and automatically update devices parameters in the design. In this example, the device is a load.
Double click on Update Parameters... see more


Tag(s): script, parametric, file, external, automate, Load

See MIMO-OFDM Narrowband-PLC in Distribution Systems: Impact of Power Transformers on Achievable Data Rates

Author: thpapad
Type: Document
Downloaded: 124 times
Date: 2017-11-03

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MIMO-OFDM Narrowband-PLC in Distribution Systems: Impact of Power Transformers on Achievable Data Rates

Description:
Power-line communication (PLC) is gaining a renewed interest, due to the smart grid (SG) emerging communication requirements. Among other communication technologies, PLC is a very efficient and feasib... see more


Tag(s): Distribution lines, distribution transformers, MIMO-OFDM, power-line communication, smart grids

See INDUCED VOLTAGES AND CURRENTS: OVERVIEW AND EVALUATION OF SIMULATION MODELS AND METHODOLOGIES

Author: thpapad
Type: Document
Downloaded: 343 times
Date: 2017-11-03

Rating:
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INDUCED VOLTAGES AND CURRENTS: OVERVIEW AND EVALUATION OF SIMULATION MODELS AND METHODOLOGIES

Description:
In this paper induced voltages and currents caused by underground cables are calculated in cable sheaths and nearby metallic pipelines. The performance of several simulation methods and models are inv... see more


Tag(s): induced voltages

See LVRT OVRT function

Author: h.gras
Type: Model
Downloaded: 166 times
Date: 2017-09-26

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LVRT OVRT function

Description:
This device is an OVRT LVRT protection device.
The user enters the curves points.
It is assumed that the curve is horizontal between two points.


Tag(s): LVRT, OVRT, ride, through, FRT, undervoltage, overvoltage

See MOSFET

Author: h.gras
Type: Example
Downloaded: 158 times
Date: 2017-07-12

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MOSFET

Description:
The model developed is an n-channel enhancement-type MOSFET with internal substrate (Bulk) connection.
Author: Maxime Berger, Polytechnique Montreal


Tag(s): MOSFET, gate, electronic

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